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China is developing compound semiconductor industry at the right time
Source: Sanfang Xinli Microelectronics Release time: 2016-10-31
Compound semiconductors are a type of semiconductor material that is different from traditional elemental materials such as silicon (Si) and germanium (Ge), mainly including gallium arsenide (GaAs), indium phosphide (InP), gallium nitride (GaN), and silicon carbide (SiC). ), Zinc oxide (ZnO), etc. Compared with silicon materials, compound semiconductors have more excellent performance. Compared with silicon devices, the fabricated devices have more excellent photoelectric performance, high speed, high frequency, high power, high temperature resistance and high radiation.
At present, the global semiconductor industry is undergoing profound changes, and compound semiconductors have become a new focus of industrial development. China should step up its industrial layout and seize the initiative in development.
Compound semiconductors become new focus in integrated circuit industry
The profound changes in the integrated circuit industry are driving the development of the compound semiconductor market. The first is that the integrated circuit industry has gradually slowed down in accordance with "Moore's Law". "Beyond Moore's Law" characterized by new materials, new structures and new processes has become the focus of the industry's new development. Second, the PC and smart phone market, which once driven the rapid growth of the integrated circuit market, is weak. In the future, 5G and the Internet of Things will become new outlets. Third, the global energy and environmental crisis is prominent, and energy utilization tends to low power consumption and refined management. As a new material and a new device, compound semiconductors have excellent properties not found in similar silicon devices in microwave communication devices, optoelectronic devices, and power devices, and will be widely used in the above applications.
Mergers and acquisitions around compound semiconductors have occurred frequently at home and abroad. In recent years, international giant companies have been embracing compound semiconductors. In August 2014, the power semiconductor leader Infineon acquired the International Rectifier Corporation (IR) for $ 3 billion, and obtained its silicon-based GaN power semiconductor manufacturing technology. ; In September of the same year, RFMD and TriQuint, which design and manufacture GaAs and GaN radio frequency chips, announced their merger as a new RF solution company, Qorvo. Domestic companies and capital have also launched acquisitions around the compound semiconductor industry.
The state "big fund" invested in Sanan Optoelectronics to deploy compound semiconductors. In June 2015, the National Integrated Circuit Industry Investment Fund ("Big Fund") invested 4.839 billion yuan in Sanan Optoelectronics, and promoted Sanan Integrated Circuits, a subsidiary of Sanan Optoelectronics, to focus on GaAs and GaN foundry manufacturing. Technology research and development, new production lines, etc. At the same time, China Development Bank also provided Sanan with a loan of 20 billion yuan at the best interest rate.
In February 2016, the Quanzhou Municipal Government, the "Big Fund", Huaxin Investment, San'an Group and others established a joint venture fund in Jinjiang City with a target size of 50 billion yuan, and the initial investment of 7.51 billion yuan will be mainly invested in III -Group V compound integrated circuit industry.
Broad market space for global compound semiconductor industry
GaAs devices GaAs microwave communication devices dominate the field of wireless PA and radio frequency switches for mobile terminals. In the future, high integration and low cost manufacturing will become the industry's development trend. In wireless communication, consumer electronics, automotive electronics, the Internet of Things and other applications Will be widely used. At the same time, GaAs-based materials are expected to be used in integrated circuit processes below 10nm and in future optical interconnect chips.
The global GaAs microwave communication device market size reached USD 8.6 billion in 2015, with over 60% of the market share concentrated on the three giants of Skyworks, Qorvo, Broadcom / Avago. In 2020, the market size is expected to exceed USD 13 billion. The GaAs industry's OEM manufacturing model is gradually emerging, and Taiwan's stable, Hongjie and Huanyu are the main OEM companies.
GaN devices The blue-green LED industry based on GaN has matured, and microwave communication devices and power electronic device products have not yet been widely used in civilian applications. Sapphire-based GaN technology is the most mature. Si-based GaN can achieve high integration and low cost. At present, Si-based GaN technology is mainstreamed at 6 inches.
The output value of GaN microwave communication devices and power electronic devices worldwide is still very low, only a few hundred million US dollars. With the advancement of technology, the output value in 2020 is expected to reach 1.5 billion US dollars. Large companies such as Infineon, Fuji, Toshiba, and Panasonic have invested heavily in the GaN field. There are also many new small companies, such as GaN Systems in Canada and EPC in the United States. In the future, it will be widely used in the fields of new energy, smart grid, information communication equipment and consumer electronics.
SiC device SiC single crystal substrates are manufactured with 4 inches as the mainstream and are transitioning to 6 inches. At the same time, 8 inches have also come out. The products are mainly power electronic devices, and SiC-SBD (Schottky diode) technology is mature. It has begun to replace Si devices in photovoltaic power generation and other fields. SiC-MOSFETs have outstanding performance, which can greatly reduce the amount of capacitors and inductors in the module and reduce Power module cost. SiC-IGBT will be used in the high-power fields such as large ship engines, smart grids, high-speed rail and wind power generation with its excellent performance in the future.
In 2015, the global SiC power electronic device market size reached nearly $ 150 million, and it is expected to reach $ 1 billion by 2020. The main suppliers of SiC substrates are Cree, Rohm / SiCrystal, and II-VI. Among them, Cree accounts for 90% of the supply of SiC substrates. In the SiC device market, Cree and Infineon / IR account for 70% of the market. SiC power electronic devices will face fierce competition from GaN devices in the field of low-voltage products. In applications such as PFC, UPS, consumer electronics, and electric vehicles, the low-cost GaN devices will occupy the main market. Markets above 1200V.
China's industrial development faces major opportunities
"Made in China 2025" provides policy support for industrial development. In May 2015, the State Council issued "Made in China 2025". The new material is one of the ten key areas in the "Made in China 2025" Key Area Technology Roadmap, of which the third-generation semiconductor in compound semiconductors is included in the key strategic material development focus.
The rapid development of integrated circuits provides technical support for industrial development. China's integrated circuits are in a period of great development, which can provide advanced technical support for the compound semiconductor industry. Such as the design and simulation technology of GaAs or GaN monolithic microwave integrated circuits, the construction technology of compound semiconductor manufacturing processes and production lines, advanced packaging and testing technology, the manufacturing technology of general equipment such as lithography machines and CVD, and large-size silicon single crystal liner Preparation technology of universal supporting materials such as substrates and photoresists.
Key application areas and domestic demand for replacement provide a huge market for industrial development. China's photovoltaic, wind energy, 4G / 5G mobile communications, high-speed railways, electric vehicles, smart grids, big data / cloud computing centers, semiconductor lighting and other industries are in full swing and are the application areas for compound semiconductors, such as 4G / 5G communication base stations and GaAs or GaN microwave radio frequency devices and modules used in terminals, SiC-based traction drive systems used in high-speed railways, GaN or SiC power inverters or converters used in photovoltaic power plants, wind farms, and electric vehicles, and SiC high power used in smart grids Switching devices, GaN or SiC-based motor motor inverter drives for industrial control, GaN or SiC-based high-efficiency power supplies for big data / cloud computing centers, GaN-based high-brightness LEDs used in semiconductor lighting, etc.
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