公司动态 Your current location ： Home > News > Company NewsCompany News
Next-generation power semiconductors: AlGaN is better than GaN
Source: Sanfang Xinli Microelectronics Release time: 2016-10-31
In the next generation of power semiconductors, AlGaN is better than GaN. This research result was jointly published by "Sandia National Laboratories" and Avogy in the "APEC 2016". Robert J. Kaplar, who gave a speech on stage, announced the characteristics of power devices prototyped with AlGaN.
Compared with GaN, AlGaN has a wider band gap and higher dielectric breakdown strength, and is expected to produce power devices with lower losses than GaN. AlGaN is a mixed crystal of GaN and AlN. According to Kaplar, in theory, the band gap of AlN is 6.2eV and the dielectric breakdown strength is 15.9MV / cm, which exceeds GaN of 3.4eV and 3.3MV / cm, respectively. Therefore, AlGaN has a wider band gap and higher dielectric breakdown strength than GaN.
In his speech, Kaplar introduced the characteristics of the two components. The first is a GaNPiN diode fabricated on a GaN substrate. The withstand voltage is 3.9kV, and the on-resistance is only 1.9mΩcm2. The chip size is several hundred μm square.
The other is an AlGaNPiN diode. On the sapphire substrate, Al0.3Ga0.7N was grown by the MOCVD method. The density of dislocations as one of the crystal defects is 1 × 1019 / cm2 to 2 × 1019 / cm2. The thickness of the drift layer is 4.3 μm, and the impurity concentration of the drift layer is about 1016 / cm3.
The withstand voltage is 1.5kV and the on-resistance is only 4mΩcm2. The chip size is about 50 μm square. A kV-rated AlGaN PiN diode is said to be the first in the world. According to the results of this calculation, the dielectric breakdown strength of Al0.3Ga0.7N is about 4MV / cm, which exceeds the theoretical value of GaN.